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| BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 98C Marking FBs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value 250 Package TSFP-3 Unit V mA mW C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Unit K/W Jun-16-2003 BFR360F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jun-16-2003 BFR360F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Transition frequency fT IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output 2) VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit max. 0.5 dB GHz pF typ. 14 0.32 0.2 0.4 1 11 - Ccb Cce Ceb Fmin Gma |S21e|2 IP3 13 9 24 dBm 15.5 11 dB P-1dB - 9 - 3 Jun-16-2003 BFR360F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: fF ps mA V ns - deg fF K - V fF V eV K 1 All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C1 L2 B L3 C B' Transistor Chip E' C' L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.657 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF C6 C2 L1 C3 C5 Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes EHA07524 4 Jun-16-2003 m V IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0.5 0.954 1E-14 mA A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 75 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA A BFR360F Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 240 mW 180 150 RthJS 10 2 P tot 120 90 60 30 10 1 -7 10 0 0 15 30 45 60 75 90 105 120 C 10 1 Ptotmax/PtotDC Ccb 10 0 -7 10 10 -6 10 Ptotmax/PtotDC = (tp) f = 1MHz 0.8 pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.6 0.5 0.4 0.3 0.2 0.1 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 12 tp 5 Jun-16-2003 Permissible Pulse Load 10 3 K/W 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Collector-base capacitance Ccb = (VCB ) V 16 VCB BFR360F Third order Intercept Point IP3=(IC) Transition frequency fT = (IC) f = 1GHz VCE = parameter 17 GHz dBm (Output, ZS=ZL=50) VCE = parameter, f = 1.8GHz 30 14 5V 20 12 3V IP 3 fT 15 10 8 2V 10 5 6V 4V 3V 2V 1V 1V 6 4 2 0 0 0.7V 0 -5 0 5 10 15 20 25 30 mA 40 5 10 15 20 25 30 mA 40 IC IC f = 0.9GHz VCE = parameter 24 dB f = 1.8GHz VCE = parameter 18 5V 22 21 20 3V 2V dB G 19 18 17 16 15 14 13 12 0 5 10 15 20 25 30 mA 0.7V 1V G 14 12 10 0.7V 40 8 0 5 10 15 20 IC 6 Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) 5V 3V 2V 1V 25 30 mA 40 IC Jun-16-2003 BFR360F 4 Power Gain Gma , Gms = VCE = parameter 49 dB Ic = 15mA (f) Insertion Power Gain |S21| = VCE = parameter 36 dB Ic = 15mA (f) 39 34 28 24 29 24 19 14 9 4 0 20 16 12 5V 2V 1V 0.7V G 5V 2V 1V 0.7V G 8 4 0 0 3.5 GHz 0.5 1 1.5 2 2.5 3 4.5 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f f f = parameter 24 dB Ic = 15mA 20 G G 18 16 1.8GHz 14 12 10 8 0 1 2 3 |S21| = (VCE): - - - - VCE = 3V f = parameter 22 dB 0.9GHz 0.9GHz 19 18 17 1.8GHz 16 15 14 13 12 11 10 9 8 2.4GHz 3GHz 1.8GHz 5 V 7 7 0 5 10 15 20 25 VCE 7 Power Gain Gma , Gms = (VCE ): Power gain Gma, Gms = (IC ) 0.9GHz 4GHz 30 35 mA 45 IC Jun-16-2003 BFR360F Noise figure NF = (IC ) Source impedance for min. VCE = 3V, f = 1,8 GHz 3 noise figure vs. frequency VCE = 3 V dB +j50 F50 +j25 +j100 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 mA 45 -j25 -j50 -j100 -j10 0 10 4GHz +j10 NFmin 2.4GHz 3GHz 1.8GHz 0.9GHz F 25 50 100 3mA 15mA IC 8 Jun-16-2003 |
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